Aluminum Nitride Ceramic Substrates
Advantages of Aluminum Nitride include great thermal performance, low thermal expansion and non-toxicity.
Desirable properties of Aluminum Nitride as an electronic substrate:
- High thermal conductivity
- Low thermal expansion coefficient closely matching Silicon
- Good dielectric strength
- High electrical sensitivity
- Low toxicity and therefore excellent replacement for BeO
- Good shock and corrosion resistance
- Low dielectric loss
- High temperature stability
- High flexure strength
- Light weight
- Resistant to wafer processing gasses and plasma erosion
- Conducive to finishing operations such as lasering, lapping, and polishing
- Substrate for direct bond copper DBC and filled vias
- Good adhesion for thin and thick film applications
- Uniform lapped and polished surfaces for resistor networks
- Polished and lapped surface finishes to 1/2 micro-inch. Ra with minimum pullouts
- Lapped surface finishes to 6 micro-inch. Ra.
Properties -Typical
| Toxicity |
Nontoxic |
| Density |
3.3 g/cm³ |
| Hardness (knoop) |
11.8 GPa |
| Moh's Hardness |
7 at 20°C |
| Flexure Strength |
290 MPa |
| Modulus of Elasticity |
331 GPa |
| Poisson's Ratio |
0.22 |
| Thermal Conductivity |
175 W/mk |
| Coefficient of Expansion |
4.6 x 10-6° (20 - 400°C) |
| Maximum Use Temperature |
800°C Oxidizing |
| Dielectric Constant |
20°C 8.9 at 1MHz |
| Dielectric Loss at 1MHz |
20°C0.0001 - 0.001 |
| Resistivity |
>10E14 ohm-cm |
Additional Aluminum Nitride Information:
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Updated: 19 October 2010
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