Aluminum Nitride Ceramic Substrates
Advantages of Aluminum Nitride
include great thermal performance, low thermal expansion and non-toxicity.
Advantages of Aluminum Nitride
include great thermal performance, low thermal expansion and non-toxicity.
- High thermal conductivity
- Low thermal expansion coefficient
closely matching Silicon
- Good dielectric strength
- High electrical sensitivity
- Low toxicity and therefore
excellent replacement for BeO
- Good shock and corrosion
resistance
- Low dielectric loss
- High temperature stability
- High flexure strength
- Light weight
- Resistant to wafer processing
gasses and plasma erosion
- Conducive to finishing operations
such as lasering, lapping, and polishing
- Substrate for direct bond
copper DBC and filled vias
- Good adhesion for thin and
thick film applications
- Uniform lapped and polished
surfaces for resistor networks
- Polished and lapped surface finishes
to 1/2 micro-inch. Ra with minimum pullouts
- Lapped surface finishes to 6 micro-inch.
Ra.
Properties -Typical
|
Toxicity
|
Nontoxic
|
|
Density
|
3.3 g/cm³
|
|
Hardness
(knoop)
|
11.8 GPa
|
|
Moh's Hardness
|
7 at 20°C
|
|
Flexure
Strength
|
290 MPa
|
|
Modulus
of Elasticity
|
331 GPa
|
|
Poisson's
Ratio
|
0.22
|
|
Thermal
Conductivity
|
175 W/mk
|
|
Coefficient
of Expansion
|
4.6 x 10-6°
(20 - 400°C)
|
|
Maximum
Use Temperature
|
800°C
Oxidizing
|
|
Dielectric
Constant
|
20°C
8.9 at 1MHz
|
|
Dielectric
Loss at 1MHz
|
20°C
0.0001 - 0.001
|
|
Resistivity
|
>10E14
ohm-cm
|
Additional Aluminum Nitride Information:
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Updated: 21 Jan 2009
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