Aluminum nitride substrates

Aluminum Nitride Ceramic Substrates

Advantages of Aluminum Nitride include great thermal performance, low thermal expansion and non-toxicity.

Desirable properties of Aluminum Nitride as an electronic substrate:

  • High thermal conductivity
  • Low thermal expansion coefficient closely matching Silicon
  • Good dielectric strength
  • High electrical sensitivity
  • Low toxicity and therefore excellent replacement for BeO
  • Good shock and corrosion resistance
  • Low dielectric loss
  • High temperature stability
  • High flexure strength
  • Light weight
  • Resistant to wafer processing gasses and plasma erosion
  • Conducive to finishing operations such as lasering, lapping, and polishing
  • Substrate for direct bond copper DBC and filled vias
  • Good adhesion for thin and thick film applications
  • Uniform lapped and polished surfaces for resistor networks
  • Polished and lapped surface finishes to 1/2 micro-inch. Ra with minimum pullouts
  • Lapped surface finishes to 6 micro-inch. Ra.

Properties -Typical

Toxicity Nontoxic
Density 3.3 g/cm³
Hardness (knoop) 11.8 GPa
Moh's Hardness 7 at 20°C
Flexure Strength 290 MPa
Modulus of Elasticity 331 GPa
Poisson's Ratio 0.22
Thermal Conductivity 175 W/mk
Coefficient of Expansion 4.6 x 10-6° (20 - 400°C)
Maximum Use Temperature 800°C Oxidizing
Dielectric Constant 20°C 8.9 at 1MHz
Dielectric Loss at 1MHz 20°C0.0001 - 0.001
Resistivity >10E14 ohm-cm





Go to

Return to Home Page:Dicing hybrid, semiconductor and dicing MEMS wafers

print page




Valley Design East
Phoenix Park Business Center
2 Shaker Road, Bldg. E-001
Shirley, MA 01464
Phone: 978.425.3030
Fax: 978.425.3031
Valley Design
Santa Cruz, CA 95060  
Phone: 831.420.0595  
Fax: 831.420.0592

©2015 Valley Design Corp. All Rights Reserved