Aluminum Nitride Substrate Information Links

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Aluminum Nitride Substrate Information Links

Key properties of Aluminum Nitride as an insulating substrate for heat sinks and thin and thick film microelectronic applications are: high thermal conductivity, nontoxic, thermal expansion close to that of Silicon and good dielectric properties.

Aluminum Nitride links for technical information, supplier lists, and material properties:

 

Typical Properties of Aluminum Nitride Substrates

Toxicity Nontoxic
Density 3.3 g/cm³
Hardness (knoop) 11.8 GPa
Moh's Hardness 7 at 20°C
Flexure Strength 290 MPa
Modulus of Elasticity 331 GPa
Poisson's Ratio 0.22
Thermal Conductivity 175 W/mk
Coefficient of Expansion 4.6 x 10E-6 (20 - 400°C)
Maximum Use Temperature 800°C Oxidizing
Dielectric Constant 20°C 8.9 at 1MHz
Dielectric Loss at 1MHz 20°C 0.0001 - 0.001
Resistivity >10E14 ohm-cm

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Updated: 21 Jan 2009

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